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RF-Lambda Gallium Nitride (GaN) Template
GaN templates refer to a thin layer of single crystalline GaN, typically with thickness less than 100 microns, epitaxially grown on a foreign substrate, e.g. sapphire. Comparing with free standing GaN substrate, GaN template is only an alternative solution to device makers and its technical merit is limited. Upon high volume and low cost production, however, GaN template can replace sapphire in LED manufacturing, enhancing up to 50% capacity of downstream MOCVD reactors. Furthermore, GaN template usually has lower dislocation density than MOCVD GaN grown on sapphire. This is a favorable factor for UV devices as it is more sensitive to dislocation density than blue LED does.